vishay semiconductors vlmk310. document number 81230 rev. 1.3, 25-feb-11 www.vishay.com 1 for technical support, please contact: led@vishay.com standard smd led plcc-2 features ? smd led with exceptional brightness ? luminous intensity categorized ? compatible with automatic placement equipment ? eia and ice standard package ? compatible with ir reflow, vapor phase and wave solder pr ocesses according to cecc 00802 and j-std-020 ? available in 8 mm tape ? low profile package ? non-diffused lens: exce llent for coupling to light pipes and backlighting ? low power consumption ? luminous intensity ratio in one packaging unit i vmax. /i vmin. ? 1.6 ? preconditioning acc. to jedec level 2a ? esd-withstand voltage: up to 2 kv according to jesd22-a114-b ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec 19225 description this device has been designed to meet the increasing demand for alingap technology. the package of the vlmk310. is the plcc-2 (equivalent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. product group and package data ? product group: led ? package: smd plcc-2 ? product series: standard ? angle of half intensity: 60 applications ? automotive: backlighting in dashboards and switches ? telecommunication: indicator and backlighting in telephone and fax ? indicator and backlight for audio and video equipment ? indicator and backlight in office equipment ? flat backlight for lcds , switches and symbols ? general use ** please see document ?vishay material category policy?: www.vishay.com/doc?99902 parts table part color, luminous intensity technology VLMK3100-GS08 red, i v > 11.2 mcd allngap on gaas vlmk3100-gs18 red, i v > 11.2 mcd allngap on gaas vlmk3102-gs08 red, i v = (22.4 to 56) mcd allngap on gaas vlmk3102-gs18 red, i v = (22.4 to 56) mcd allngap on gaas vlmk3105-gs08 red, i v = (35.5 to 90) mcd allngap on gaas vlmk3105-gs18 red, i v = (35.5 to 90) mcd allngap on gaas
www.vishay.com 2 document number 81230 rev. 1.3, 25-feb-11 vishay semiconductors vlmk310. for technical support, please contact: led@vishay.com notes: 1) t amb = 25 c, unless otherwise specified 2) driving led in reverse direction is suitable for short term application notes: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax. /i vmin. ? 1.6 note: luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. the above type numbers represent the order groups which include only a few brightness groups. only one group will be shipped on each reel (there will be no mixi ng of two groups on each reel). in order to ensure availability, single brightness groups will not be orderable. in a similar manner for colors where wavelength groups are measured and binned, single wavel ength groups will be shipped on any one reel. in order to ensure availability, single wavelength groups will not be orderable. absolute maximum ratings 1) vlmk310. parameter test condition symbol value unit reverse voltage 2) v r 5v dc forward current t amb ? 85 c i f 30 ma surge forward current t p ? 10 s i fsm 0.1 a power dissipation p v 80 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w optical and electrical characteristics 1) vlmk310., red parameter test condition part symbol min. typ. max. unit luminous intensity 2) i f = 10 ma vlmk3100 i v 11.2 50 mcd vlmk3102 i v 22.4 56 mcd vlmk3105 i v 35.5 90 mcd dominant wavelength i f = 10 ma ? d 630 nm peak wavelength i f = 10 ma ? p 643 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 1.9 2.6 v reverse voltage i r = 10 a v r 5v junction capacitance v r = 0, f = 1 mhz c j 15 pf luminous intensity classification group light intensity (mcd) standard optional min. max. l 1 11.2 14.0 2 14.0 18.0 m 1 18.0 22.4 2 22.4 28.0 n 1 28.0 35.5 2 35.5 45.0 p 1 45.0 56.0 2 56.0 71.0 q 1 71.0 90.0 2 90.0 112.0 r 1 112.0 140.0 2 140.0 180.0 crossing table vishay osram vlmk3100 lst676 vlmk3102 lst676 vlmk3105 lst676
document number 81230 rev. 1.3, 25-feb-11 www.vishay.com 3 vishay semiconductors vlmk310. for technical support, please contact: led@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. max. permissible forward current vs. ambient temperature figure 2. rel. luminous intensity vs. angular displacement figure 3. forward current vs. forward voltage 0 5 10 15 20 25 30 35 40 0 10203040506070 8 0 90 100 t am b - am b ient temperat u re (c) 16615 i f - for w ard c u rrent (ma) 0.4 0.2 0 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity ? - ang u lar displacement 1 10 100 11.522.53 v f - for w ard v oltage ( v ) 95 10 8 7 8 i f - for w ard c u rrent (ma) figure 4. rel. luminous intensity vs. ambient temperature figure 5. specific lum inous intensity vs. forward current/duty cycle figure 6. relative luminous intensity vs. forward current 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 0 10203040506070 8 0 90 100 t am b - am b ient temperat u re (c) 1661 8 i v rel - relati v e l u mino u s intensity 0.0 0.4 0. 8 1.2 1.6 2.0 110 96 115 8 9 i spec - specific l u mino u s intensity t p /t i f (ma) 50 520 2 0.5 0.2 0.1 0.05 0.02 1 0.01 0.1 1 10 110100 i f - for w ard c u rrent (ma) 96 115 88 i v rel - relati v e l u mino u s intensity
www.vishay.com 4 document number 81230 rev. 1.3, 25-feb-11 vishay semiconductors vlmk310. for technical support, please contact: led@vishay.com package dimensions in millimeters figure 7. relative intensity vs. wavelength figure 8. forward voltage vs. ambient temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 600 620 640 660 6 8 0700 - w a v elength (nm) 96 12075 i rel - relati v e intensity 1.60 1.65 1.70 1.75 1. 8 0 1. 8 5 1.90 1.95 2.00 2.05 2.10 0 10203040506070 8 0 90 100 t am b - am b ient temperat u re (c) 16617 i f = 20 ma v - relati v e for w ard v oltage frel red figure 9. permissible forwar d current vs. pulse length 10.00 100.00 1000.00 0.01 0.10 1.00 10.00 100.00 t p - p u lse length (ms) 16622 i - for w ard c u rrent (ma) fm t p /t = 0.01 0.02 0.05 0.1 0.2 0.5 1 20541 mounting pad layout 1.2 2.6 (2. 8 ) 1.6 (1.9) 4 4 area co v ered w ith solder resist 3.5 0.2 3 + 0.15 1.75 0.1 0.9 2. 8 0.15 ca pin identification 2.2 ? 2.4 technical dra w ings according to di n specifications dra w ing- n o.: 6.541-5067.01-4 iss u e: 5; 04.11.0 8
document number 81230 rev. 1.3, 25-feb-11 www.vishay.com 5 vishay semiconductors vlmk310. for technical support, please contact: led@vishay.com method of taping/polarity and tape and reel smd led (vlm3-series) vishay?s leds in smd pack ages are available in an antistatic 8 mm blister tape (in accordance with din iec 40 (co) 564) for automatic component insertion. the blister tape is a plastic strip with impressed component cavities, covered by a top tape. taping of vlm.3.. reel package dimension in millimeters for smd leds, tape option gs08 (= 1500 pcs.) reel package dimension in millimeters for smd leds, tape option gs18 (= 8000 pcs.) preferred soldering profile figure 10. tape dimensions in mm for plcc-2 figure 11. reel dimensions - gs08 adhesi v e tape component ca v ity blister tape 94 8 670 1. 8 5 1.65 4.0 3.6 3.6 3.4 2.05 1.95 1.6 1.4 4.1 3.9 4.1 3.9 5.75 5.25 8 .3 7.7 3.5 3.1 2.2 2.0 0.25 94 8 66 8 1 8 0 17 8 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8 665 identification la b el: v ishay type gro u p tape code prod u ction code qu antity figure 12. reel dimensions - gs18 figure 13. vishay lead (pb)-fr ee reflow soldering profile (acc. to j-std-020) figure 14. double wave soldering of opto devices (all packages) 321 329 identification 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 14.4 max. 10.4 8 .4 120 1 88 57 la b el: v ishay type gro u p tape code prod u ction code qu antity 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 88 5 ir reflo w soldering profile for lead (p b )-free soldering preconditioning acc. to jedec le v el 2a max. 2 cycles allo w ed 255 c 235 c to 260 c 2 k/s ca. 200 k/s second w a v e first w a v e 5 s f u ll line: typical dotted line: process limits time (s) temperat u re (c) lead temperat u re 300 250 200 150 100 50 0 0 50 100 150 200 250 94 8 626-1 tt w soldering (acc. to cecc00 8 02) 100 c to 130 c forced cooling ca. 2 k/s ca. 5 k/s
www.vishay.com 6 document number 81230 rev. 1.3, 25-feb-11 vishay semiconductors vlmk310. for technical support, please contact: led@vishay.com bar code product label a) type of component b) manufacturing plant c) sel - selection code (bin): e.g.: n2 = code for luminous intensity group d) date code year/week e) day code (e.g. 1: monday) f) batch no. g) total quantity h) company code dry packing the reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping purposes. recommended method of storage dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. the following conditions should be observed, if dry boxes are not available: ? storage temperature 10 c to 30 c ? storage humidity ? 60 % rh max. after more than 672 h under these conditions moisture content will be too high for reflow soldering. in case of moistu re absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 c + 5 c/- 0 c and < 5 % rh (dry air/nitrogen) or 96 h at 60 c + 5 c and < 5 % rh for all device containers or 24 h at 100 c + 5 c not suitable for reel or tubes. an eia jedec standard jesd22-a112 level 2a label is included on all dry bags. example of jesd22-a112 level 2a label esd precaution proper storage and handling procedures should be followed to prevent esd damage to the devices especially when they are removed from the antistatic shielding bag. electro-static sensitive devices warning labels are on the packaging. vishay semiconductors standard bar code labels the vishay semiconductors standard bar code labels are printed at final packing areas. the labels are on each packing unit and contain vishay semiconductors specific data. 37 v ishay a h b c d e f g 106 19 88 4 al u min u m b ag la b el reel 15973 l e v e l caution this bag contains moisture ? sensitive devices 1. shelf life in sealed bag 12 months at <40c and < 90% relative humidity (rh) 2. after this bag is opened devices that will be subjected to infrared reflow, vapor - phase reflow, or equivalent processing (peak package body temp. 260c) must be: a) mounted within 672 hours at factory condition of < 30c/60%rh or b) stored at <1 0% rh. 3. devices require baking before mounting if: a) humidity indicator card is >10% when read at 23c + 5c or b) 2a or 2b is not met. 4. if baking is required, devices may be baked for: 192 hours at 40c + 5c/ - 0c and <5%rh (dry air/nitrogen) or 96 hours at 605 o cand <5%rh for all device containers or 24 hours at 1005c not suitable for reels or tubes bag seal date: ______________________________ (if blank, see bar code label) note: level defined by eia jedec standard jesd22 - a113 2a 197 8 6
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